Improvement in the electronic quality of pulsed laser deposited CuIn0.7Ga0.3Se2 thin films via post-deposition elemental sulfur annealing process

THIN SOLID FILMS

卷:608

Article

Beres, M.^1,2  Yu, K. M.^2,3  Syzdek, J.^2,4  Mao, S. S.^1,2 

[1] Univ Calif Berkeley, Dept Mech Engn, 6141 Etcheverry Hall, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, 1 Cyclotron Rd, Berkeley, CA 94720 USA

[3] City Univ Hong Kong, Dept Phys & Mat Sci, 83 Tat Chee Ave, Kowloon, Hong Kong, Peoples R China

[4] Biol USA, 9050 Executive Pk Dr NW, Knoxville, TN 37923 USA

关键词: Cu(In,Ga)(Se,S)(2) absorber;    Pulsed laser deposition;    Elemental sulfur annealing;    Hall effect;    Raman spectroscopy;    Rutherford backscattering;   

DOI  :  10.1016/j.tsf.2016.04.019

来源: Elsevier

【 摘 要 】

We synthesized CuIn0.7Ga0.3Se2 thin films on soda lime glass substrates using pulsed laser deposition and post-annealing under different conditions. Increasing substrate temperature during deposition and vacuum annealing after deposition both increased grain size but had negligible effect on the electronic properties of the films. As-deposited films demonstrated P-type conductivities with high carrier concentrations and low Hall mobilities, but annealing in elemental sulfur environment significantly improved the electronic properties of the films. We found that the incorporation of even small quantities of sulfur into the films reduced carrier concentrations by over three orders of magnitude and increased Hall mobilities by an order of magnitude. This resulted in films with resistivity similar to 5 Omega . cm suitable for photovoltaic applications. (C) 2016 Elsevier B.V. All rights reserved.

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