Effect of substrate bias on the growth behavior of iridium on A-plane sapphire using radio frequency sputtering at low temperatures

THIN SOLID FILMS

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Article

Frank, Meyer¹  Sabine, Oeser¹  Andreas, Graff²  Eduard, Reisacher¹  Eva-Regine, Carl¹  Alexander, Fromm¹  Marco, Wirth¹  Lukas, Groener¹  Frank, Burmeister¹ 

[1] Fraunhofer Inst Werkstoffmech IWM, Woehlerstr 11, D-79108 Freiburg, Germany

[2] Fraunhofer Inst Mikrostruktur Werkstoffen & Syst, Walter Hulse Str 1, D-06120 Halle, Germany

关键词: Bias-assisted rf-sputtering;    Iridium;    Heteroepitaxy;    Ion assisted film growth;    Low temperature;   

DOI  :  10.1016/j.tsf.2018.01.032

来源: Elsevier

【 摘 要 】

We present results on the investigation of the substrate bias effect on the growth behavior of iridium films deposited on A-plane sapphire by radio frequency (rf) sputtering at low substrate temperatures. Films deposited without substrate bias were compared to films deposited with simultaneous application of a second rf-plasma on the substrate. Resulting films were characterized by scanning electron microscopy, X-ray diffraction, and electron backscattering diffraction. We find that the application of an additional substrate bias has a strong effect on the growth behavior of Ir in such a way that preferential growth of iridium (001) on sapphire (11-20) at high deposition rates and at substrate temperatures as low as 350 degrees C becomes feasible.

【 授权许可】

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