Phase control of Al2O3 thin films grown at low temperatures

THIN SOLID FILMS

卷:513

Article

Andersson, J. M. ; Wallin, E. ; Helmersson, U. ; Kreissig, U. ; Munger, E. P.

关键词: aluminum oxide;    chromium oxide;    sputtering;    ion bombardment;    X-ray diffraction;   

DOI  :  10.1016/j.tsf.2006.01.016

来源: Elsevier

【 摘 要 】

Low-temperature growth (500 degrees C) of alpha-Al2O3 thin films by reactive magnetron sputtering was achieved for the first tune. The films were grown onto Cr2O3 nucleation layers and the effects of the total and O-2 partial pressures were investigated. At 0.33 Pa total pressure and >= 16 mPa O-2 partial pressure alpha-Al2O3 films formed, while at lower O-2 pressure or higher total pressure (0.67 Pa), only gamma phase was detected in the films (which were all stoichiometric). Based on these results we suggest that alpha phase formation was promoted by a high energetic bombardment of the growth surface. This implies that the phase content of Al2O3 films can be controlled by controlling the energy of the depositing species. The effect of residual H2O (similar to 10(-4) Pa) on the films was also studied, showing no change in phase content and no incorporated H (< 0.1%). Overall, these results are of fundamental importance in the further development of low-temperature Al2O3 growth processes. (c) 2006 Elsevier B.V. All rights reserved.

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