Hydrogen absorption in epitaxial bcc V (001) thin films analysed by statistical thermodynamics

THIN SOLID FILMS

卷:518

Article

Shohoji, Nobumitsu

关键词: V-H;    Epitaxial thin film;    Non-stoichiometry;    Interstitial solid solution;    Statistical thermodynamics;   

DOI  :  10.1016/j.tsf.2010.06.052

来源: Elsevier

【 摘 要 】

Andersson. Aits and Hjorvarsson of Uppsala University measured hydrogen uptake in epitaxial bcc (body centred cubic) vanadium (V) (001) thin films of thickness, 50 nm and 100 nm, over temperature range between 443 K and 513 K. The reported equilibrium pressure-temperature-composition (P-T-C) relationships for the epitaxial bcc V (001) thin films showed appreciable extent of enhancement of H solubility compared with that for bulk bcc V. In this work, the reported equilibrium P-T-C relationships for the epitaxial bcc V(001) thin films by Andersson et al. were analysed in terms of statistical thermodynamics for H(2) gas partial pressure p(H(2)) up to 100 and H/V mole atom ratio x in VH(x) up to 1. The present analysis results showed that, up to x = 0.75, the state of H in the V lattice was comparable to that in bulk VH(x) specimen but that in the range of x higher than 0.75, state of H in the thin film with the constrained basal plane condition was evidently distinguishable from that in non-constrained bulk VH(x). This was concluded to be the consequence of the tetragonal distortion of the bcc lattice with biaxially constrained condition at the bottom surface of the VH(x) (001) thin film in the range of x exceeding 0.75. (C) 2010 Elsevier B.V. All rights reserved

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