Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy

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Article

Sadakuni-Makabe, Kenji¹  Suzuno, Mitsushi¹  Harada, Kazunori¹  Suemasu, Takashi¹  Akinaga, Hiro^2,3 

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanodevice Innovat Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

关键词: Fe3Si;    Ferromagnetic;    MR;    RTD;    NDR;    MBE;   

DOI  :  10.1016/j.tsf.2011.05.026

来源: Elsevier

【 摘 要 】

We have fabricated 200-nm-diameter ferromagnetic resonant tunneling diodes (FM-RTDs) using CaF2/Fe3Si heterostructures on Si(111) substrates, by selected-area molecular beam epitaxy (MBE) using electron-beam (EB) lithography. Clear negative differential resistances (NDRs) were observed in the current-voltage (I-V) characteristics at room temperature (RT). The reproducibility of the I-V characteristics was greatly improved, and approximately 40% of the FM-RTDs showed clear NDRs at RT. (C) 2011 Elsevier B. V. All rights reserved.

【 授权许可】

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