Thermal stability of conductive and transparent V-doped ZnO thin films

THIN SOLID FILMS

卷:557

Article; Proceedings Paper

Chiba, Hiroshi¹  Mori, Tatsuya¹  Okuda, Shuhei¹  Washio, OkudaKatsuyoshi¹ 

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

关键词: RF magnetron sputtering;    ZnO;    Vanadium;    Heat treatment;    Thermal stability;    Resistivity;   

DOI  :  10.1016/j.tsf.2014.01.026

来源: Elsevier

【 摘 要 】

The thermal stability of electrical, optical and structural properties of vanadium-doped zinc oxide (VZO) thin films has been investigated after heat treatments up to 550 degrees C in N-2 and O-2 atmospheres. ZnO and VZO films were prepared by RF magnetron sputtering on quartz substrates at 200 degrees C. It was found that the resistivity of VZO films remains low at about 5 x 10(-4) Omega cm when heat treated at temperature up to 450 degrees C in both N-2 and O-2 atmospheres, while resistivity of the ZnO film increased remarkably due to the compensation of oxygen vacancies in O-2 heat treatments over 400 degrees C. Optical transmittance of the as-grown VZO film in the visible range (400-1100 nm) was 20-30% and improved up to about 80% when heat treated at temperature up to 500 degrees C in N-2 and O-2 atmospheres. Decreased c-axis lattice constant in the VZO film was larger in N-2 heat treatments than in O-2 heat treatments. Based on these experimental results, we made the hypothesis that V-O bonds similar to vanadium trioxide in the as-grown VZO film changed to those similar to vanadium pentoxide after heat treatments over 500 degrees C. (c) 2014 Elsevier B.V. All rights reserved.

【 授权许可】

Free