p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells

THIN SOLID FILMS

卷:705

Article

Khorani, Edris¹  Scheul, Tudor E.¹  Tarazona, Antulio²  Nutter, John³  Rahman, Tasmiat¹  Boden, Stuart A.¹ 

[1] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

[2] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[3] Univ Sheffield, Henry Royce Inst, Sheffield S10 2TN, S Yorkshire, England

关键词: Hot wire chemical vapour deposition;    Silicon solar cells;    Emitter;    Crystallisation;    Transmission electron microscopy;    Selective area electron diffraction;   

DOI  :  10.1016/j.tsf.2020.137978

来源: Elsevier

【 摘 要 】

Hot wire chemical vapour deposition (HWCVD) is explored as a way of growing boron-doped silicon for photovoltaic devices. Deposition temperatures are measured using a custom-built monitoring system for two different filament configurations within the HWCVD tool. A refined fabrication process is presented, using an altered filament arrangement, that currently provides a maximum deposition temperature of 535 degrees C, for growing boron-doped silicon films via HWCVD, with the inclusion of a short post-deposition anneal at 800 degrees C for 2 min. Transmission electron microscopy reveals improvements in interfacial quality, as well as larger grains, present after post-annealing treatments. In addition, re-crystallisation of as-deposited amorphous Si films under a short anneal is confirmed using Raman spectroscopy. The enhancements in morphology translate to a boost in current rectification based on dark current-voltage measurements. This is further supported by secondary-ion mass spectrometry analysis, presenting p(+) properties with uniform doping in the 10(21) cm(-3) region.

【 授权许可】

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