Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

THIN SOLID FILMS

卷:501

Article; Proceedings Paper

Fonrodona, M ; Soler, D ; Villar, F ; Escarré, J ; Asensi, JM ; Bertomeu, J ; Andreu, J

关键词: microcrystalline silicon;    hot-wire CVD;    solar cells;   

DOI  :  10.1016/j.tsf.2005.07.146

来源: Elsevier

【 摘 要 】

Hot-Wire Chemical Vapor Deposition has led to microcrystalline silicon solar cell efficiencies similar to those obtained with Plasma Enhanced CVD. The light-induced degradation behavior of microcrystalline silicon solar cells critically depends on the properties of their active layer. In the regime close to the transition to amorphous growth (around 60% of amorphous volume fraction), cells incorporating an intrinsic layer with slightly higher crystalline fraction and [220] preferential orientation are stable after more than 7000 h of AM1.5 light soaking. On the contrary, solar cells whose intrinsic layer has a slightly lower crystalline fraction and random or [111] preferential orientation exhibit clear light-induced degradation effects. A revision of the efficiencies of Hot-Wire deposited microcrystalline silicon solar cells is presented and the potential efficiency of this technology is also evaluated. (c) 2005 Elsevier B.V. All rights reserved.

【 授权许可】

Free