Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy

THIN SOLID FILMS

卷:508

Article; Proceedings Paper

Kobayashi, R ; Nakayama, T

关键词: computer simulation;    defects;    stacking-fault tetrahedron;    annihilation;   

DOI  :  10.1016/j.tsf.2005.08.399

来源: Elsevier

【 摘 要 】

Stacking-fault tetrahedron (SFT) is a nano- to micrometer size defect that is generated in epitaxialized films originating from impurity atoms on the substrate. The atomistic process of thermal annihilation of the SFT in Si(111) films was investigated using molecular dynamics simulations. We found that the SFT is annihilated by the movement of Shockley partial dislocations from the top Surface to the SFT bottom apex. (c) 2005 Elsevier B.V. All rights reserved.

【 授权许可】

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