Crystallization of amorphous silicon thin film by using a thermal plasma jet

THIN SOLID FILMS

卷:517

Article; Proceedings Paper

Lee, Hyun Seok¹  Choi, Sooseok¹  Kim, Sung Woo¹  Hong, Sang Hee¹ 

[1] Seoul Natl Univ, Dept Nucl Engn, Seoul 151742, South Korea

关键词: Crystallization;    Polycrystalline silicon;    Thermal plasma annealing;    Anode nozzle geometry;   

DOI  :  10.1016/j.tsf.2009.01.138

来源: Elsevier

【 摘 要 】

Amorphous silicon (a-Si) films deposited on glass substrates were crystallized using a thermal plasma jet and the treated films are analyzed to find the relationship between plasma characteristics and crystallization process conditions. The crystallization process conditions were found to have different optimal operating regimes depending on the nozzle geometry. Numerical analysis of the thermal plasma jets showed that the different operating regimes for crystallization were caused by modifications of the plasma characteristics by the nozzle geometry. It is revealed that a stepped-divergent nozzle is more efficient for the thermal plasma annealing process than the conventional cylindrical one due to the broadened high-temperature region and the lowered axial velocity in the plasma jet. (C) 2009 Elsevier B.V. All rights reserved.

【 授权许可】

Free