MgZnO based ultraviolet photodetector with high photoresponsivity achieved by fluorine doping

THIN SOLID FILMS

卷:634

Article; Proceedings Paper

Hou, Yaonan¹  Mei, Zengxia¹  Liu, Zhanglong¹  Liang, Huili¹  Gu, Changzhi¹  Du, Xiaolong^1,2 

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China

关键词: Magnesium zinc oxide;    Photodetectors;    Metal-semiconductor-metal;    Schottky barrier;    Fluor doping;   

DOI  :  10.1016/j.tsf.2017.03.054

来源: Elsevier

【 摘 要 】

We report a high-responsivity ultraviolet photodetector fabricated from fluorine doped Mg0.4Zn0.6O thin film grown by molecular beam expitaxy. The doped epitaxial film demonstrates a low resistivity with a carrier concentration of 2.18 x 10(17) cm(-3) and mobility of 2.67 cm(2)/Vs(-1) by Van der Pauw Hall measurements. With a further study of a single Ti/Au-MgZnO:F Schottky junction, it is found the device has a lowered barrier height of 0.59-0.64 eV compared with the calculated value. Our photodetector configured with a metal-semiconductor-metal structure with Ti/Au interdigital electrodes exhibits a high photoresonsivity of 80 A/W, nearly 800 times larger than that of undoped sample. This record-high value is attributed to the lowered Schottky barrier as well as reduced barrier thickness thanks to the effective fluorine doping. (C) 2017 Published by Elsevier B.V.

【 授权许可】

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