ZrB2 thin films grown by high power impulse magnetron sputtering from a compound target

THIN SOLID FILMS

卷:526

Article

Samuelsson, Mattias^1,2  Jensen, Jens¹  Helmersson, Ulf¹  Hultman, Lars¹  Hogberg, Hans¹ 

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden

[2] Impact Coatings AB, SE-58216 Linkoping, Sweden

关键词: Zirconium diboride;    Thin films;    High power impulse magnetron sputtering;    High power pulsed magnetron sputtering;    Compound target;    Industrial scale deposition system;    Crystalline films;   

DOI  :  10.1016/j.tsf.2012.11.006

来源: Elsevier

【 摘 要 】

ZrB2 thin films were grown on Si by high power impulse magnetron sputtering (HiPIMS) from a compound target in an industrial deposition system. By keeping a constant average power while modifying the HiPIMS pulse repetition frequency, the pulse peak current and thereby the degree of ionisation was varied. The films were characterised using X-ray diffraction techniques, scanning electron microscopy, time-of-flight elastic recoil detection analysis, and four-point probe measurements. It was found that the composition of the films matched closely that of the target material, and the films were low in contamination. The films were crystalline with a strong (000n) preferred orientation, and that the residual stress could be adjusted, from tensile to compressive, by increasing the degree of ionisation. The film morphology appeared dense, with a smooth surface, and the resistivity was found to range from 180 to 250 mu Omega cm with no clear dependence on frequency in the investigated parameter range. (c) 2012 Elsevier B.V. All rights reserved.

【 授权许可】

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