Artificial duplication of polarization fatigue in Pb(Zr0.54Ti0.46)O3 thin film capacitors

THIN SOLID FILMS

卷:527

Article

Bouregba, Rachid^1,2,3  Sama, Nossikpendou⁴  Soyer, Caroline⁴  Poullain, Gilles^1,2,3  Remiens, Denis⁴ 

[1] Univ Caen Basse Normandie, UMR CRISMAT 6508, F-14032 Caen, France

[2] ENSICAEN, UMR CRISMAT 6508, F-14050 Caen, France

[3] CNRS, UMR CRISMAT 6508, F-14050 Caen, France

[4] IEMN DOAE, CNRS UMR 8520, F-59655 Villeneuve Dascq, France

关键词: Ferroelectrics;    Lead zirconate titanate;    Thin films;    Polarization;    Fatigue;    Modeling;    Interface defects;   

DOI  :  10.1016/j.tsf.2012.11.098

来源: Elsevier

【 摘 要 】

Polarization fatigue in ferroelectric perovskite oxides is a commonly known phenomenon. However no model has promoted consensual interpretation regarding its nature. In this article, the polarization loop of a Pb(Zr0.54Ti0.46)O-3 thin film capacitor measured at a given moment of the fatigue process is entirely duplicated after bringing in series with a fresh sample an electrical circuit calibrated in a way to model the aging mechanism. The latter was analyzed by considering time dependent interface properties but invariant bulk values. Unequivocal demonstration is made that fatigue polarization in the studied sample resulted from decline of the electric properties of the interfaces, leading to a decrease in the electric field actually applied to the switching domains. Injection of charge at interface defects, caused by polarization reversal, was probably the vector of these degradations. (C) 2012 Elsevier B. V. All rights reserved.

【 授权许可】

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