Diffusion barrier property of MnSixOy layer formed by chemical vapor deposition for Cu advanced interconnect application

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Article

Mai Phuong Nguyen¹  Sutou, Yuji¹  Koike, Junichi¹ 

[1] Tohoku Univ, Dept Mat Sci & Engn, Sendai, Miyagi 9808579, Japan

关键词: Interconnect application;    Cu diffusion barrier;    Manganese oxide;    Chemical vapor deposition;   

DOI  :  10.1016/j.tsf.2015.03.007

来源: Elsevier

【 摘 要 】

An amorphous manganese oxide layers formed by chemical vapor deposition have been studied as a copper diffusion barrier. The thermal stability of the barrier layer was assessed by annealing Cu/MnSixOy/SiO2/Si samples at 400 degrees C for various times up to 10 h. Transmission electron microscopy, energy-dispersive X-ray spectroscopy (EDX), secondary ion mass spectroscopy (SIMS), capacitance-voltage and current-voltage measurements were performed. Failure of the barrier property is marked by observing the copper peak appearing in EDX and SIMS spectra data fromthe SiO2 region. Amorphous MnSixOy barrier with a thickness of 1.2 nm has failed in preventing Cu diffusion into SiO2 substrate after anneal at 400 degrees C in vacuum for 1h, as proven by the presence of Cu in the dielectric (SiO2) layer. However, the amorphous MnSixOy with the thickness of 2.0 nm barrier was thermally stable and could prevent Cu from inter-diffusion to the SiO2 substrate after annealing at 400 degrees C even up to 10 h. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

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