Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness

THIN SOLID FILMS

卷:583

Article

Rubi, D.^1,2,3,4  Kalstein, A.^1,2,3  Roman, W. S.^1,2,3  Ghenzi, N.^1,2,3  Quinteros, C.^1,2,3  Mangano, E.⁵  Granell, P.⁵  Golmar, F.^3,4,5  Marlasca, F. G.^1,2  Suarez, S.^3,6  Bernardi, G.^3,6  Albornoz, C.^1,2  Leyva, A. G.^1,2,4  Levy, P.^1,2,3 

[1] CNEA, GIyA, RA-1650 Buenos Aires, DF, Argentina

[2] CNEA, INN, RA-1650 Buenos Aires, DF, Argentina

[3] Consejo Nacl Invest Cient & Tecn CONICET, Santa Fe, Argentina

[4] UNSAM, Escuela Ciencia & Tecnol, RA-1650 Buenos Aires, DF, Argentina

[5] CMNB, INTI, Buenos Aires, DF, Argentina

[6] Ctr Atom Bariloche CNE, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

关键词: Oxide thin films;    Resistive Random Access Memory;    Radiation hardness;   

DOI  :  10.1016/j.tsf.2015.03.048

来源: Elsevier

【 摘 要 】

We report on the fabrication and characterization of La2/3Ca1/3MnO3 manganite-based memristive devices. Polycrystalline manganite thin films were grown by Pulsed Laser Deposition, while metallic electrodes were deposited by sputtering. We show that, depending on the polarity of the initial electroforming, both clockwise and anti-clockwise current-voltage curves can be obtained. We attribute this behavior to the coexistence of different resistive switchingmechanisms. We finally evaluate the electrical behavior of our devices after irradiation with high energy oxygen ions. We find no significant difference in the dielectric breakdown voltages between irradiated and non-irradiated devices, indicating that they may present radiation hardness and could be therefore appropriate for space or nuclear applications. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

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