Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6

THIN SOLID FILMS

卷:517

Article

Akhtar, Saeed^1,2  Tanaka, A.^1,2  Usami, K.^1,2  Tsuchiya, Y.^1,2  Oda, S.^1,2,3 

[1] Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Meguro Ku, Tokyo 1528552, Japan

[3] JST, Kawaguchi, Saitama 3320012, Japan

关键词: Si nanowires;    Synthesis;    Diffusion;    Diameter distribution;    Au Catalyst;    Eutectic temperature;    Low pressure chemical vapor deposition;   

DOI  :  10.1016/j.tsf.2008.08.155

来源: Elsevier

【 摘 要 】

SiNW synthesis by vapor-liquid-solid (VLS) growth mechanism has been reported by many authors but a deep understanding of the key factors affecting the nanowire growth is still lacking. Here, we report a thorough investigations of the SiNW growth by employing silicon substrates with different crystal orientations and surface preparation using Au thin film as a catalyst. We observed that the activity of the Au particles strongly depends on the crystal orientation and the substrate surface preparation significantly affects the properties of SiNWs. We found that the density and growth rate of nanowires is different in a temperature dependent growth on Si(100) from Si(111). We found that the density and growth rate of nanowires is different at different crystal orientations of the substrates. We have grown nearly uniform diameter and micrometer long SiNWs by using Si2H6 as a source gas in low pressure chemical vapor deposition around eutectic temperature. The length of the SiNWs can be controlled mainly by varying the growth time. (c) 2008 Elsevier B.V. All rights reserved.

【 授权许可】

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