Defect control by Al deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Yang, Haigui¹  Wang, Dong¹  Nakashima, Hiroshi¹  Hirayama, Kana²  Kojima, Satoshi²  Ikeura, Shogo² 

[1] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Fukuoka 8168580, Japan

[2] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Fukuoka 8168580, Japan

关键词: SiGe-on-insulator;    Ge condensation;    Defect passivation;    Acceptor concentration;    Interface-trap density;   

DOI  :  10.1016/j.tsf.2009.09.179

来源: Elsevier

【 摘 要 】

SiGe-on-insulator (SGOI) substrates with different Ge fractions (Ge%) were fabricated using Ge condensation technique High acceptor concentration (NA) in SGOI layer and interface-trap density (D.,) at SGOI/buried oxide (BOX) interface were found by using back-gate metal-oxide-semiconductor field-effect transistor method. For the reduction of high N-A and D-it, Al deposition and the Subsequent post-deposition annealing (Al-PDA) were carried Out. As a comparison, a forming gas annealing (FGA) was also performed in H-2 ambient It was found that both Al-PDA and FGA effectively reduced N-A and D-it for low-Ge% SGOI However, with an increase in Ge%, FGA became less effective while Al-PDA was very effective for the reduction of NA and D-it. (C) 2009 Elsevier B.V. All rights reserved

【 授权许可】

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