Metal-organic chemical vapor deposition of ultra-thin photovoltaic devices using a pyrite based p-i-n structure

THIN SOLID FILMS

卷:519

Article; Proceedings Paper

Clayton, A. J.¹  Irvine, S. J. C.¹  Barrioz, V.¹  Brooks, W. S. M.¹  Zoppi, G.²  Forbes, I.²  Rogers, K. D.³  Lane, D. W.³  Hutchings, K.³  Roncallo, S.³ 

[1] Glyndwr Univ, CSER, OpTIC Technium, St Asaph LL17 0JD, Wales

[2] Northumbria Univ, NPAC, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

[3] Cranfield Univ, Ctr Mat Sci & Engn, Swindon SN6 8LA, Wilts, England

关键词: Chemical vapour deposition (CVD);    Cadmium telluride;    Sulphides;    Solar cells;   

DOI  :  10.1016/j.tsf.2010.12.147

来源: Elsevier

【 摘 要 】

Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSx layer into a CdS/CdTe structure. X-ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS2 after post growth sulphur (S) annealing of the FeSx layer between 400 degrees C and 500 degrees C. Devices using a superstrate configuration incorporating a sulphurised or non-sulphurised FeSx layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeSx layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSx interface due to S inter-diffusion during the annealing process. (C) 2011 Elsevier B.V. All rights reserved.

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