Toward energy-efficient physical vapor deposition: Routes for replacing substrate heating during magnetron sputter deposition by employing metal ion irradiation

SURFACE & COATINGS TECHNOLOGY

卷:415

Article

Li, X.¹  Bakhit, B.¹  Joesaar, M. P. Johansson²  Hultman, L.¹  Petrov, I^1,3,4  Greczynski, G.¹ 

[1] Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden

[2] SECO Tools AB, SE-73782 Fagersta, Sweden

[3] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

[4] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei 10607, Taiwan

关键词: Thin films;    TiAlN;    Magnetron sputtering;    HiPIMS;    Low-temperature growth;   

DOI  :  10.1016/j.surfcoat.2021.127120

来源: Elsevier

【 摘 要 】

In view of the increasing demand for achieving sustainable development, the quest for lowering energy consumption during thin film growth by magnetron sputtering becomes of particular importance. In addition, there is a demand for low-temperature growth of dense, hard coatings for protecting temperature-sensitive substrates. Here, we explore a method, in which thermally-driven adatom mobility, necessary to obtain high-quality fully-dense films, is replaced with that supplied by effective low-energy recoil creation resulting from high-mass metal ion irradiation of the growing film surface. This approach allows the growth of dense and hard films with no external heating at substrate temperatures T-s not exceeding 130 degrees C in a hybrid high-power impulse and de magnetron co-sputtering (HiPIMS/DCMS) setup involving a high mass (m > 180 amu) HiPIMS target and metal- ion-synchronized bias pulses. We specifically investigate the effect of the metal ion mass on the extent of densification, phase content, nanostructure, and mechanical properties of metastable cubic Ti0.50Al0.50N based thin films, which present outstanding challenges for phase stability control. Ti0.50Al0.50N based thin films are irradiated by group VIB transition metal (TM) target ions generated by Me-HiPIMS discharge, in which Me = Cr (m(Cr)= 52.0 amu), Mo (m(Mo) = 96.0 amu), and W (m(W) = 183.8 amu). Three series of (Ti1-yAly)(1-x)MexN films are grown with x = Me/(Me+Al+Ti) varied intentionally by adjusting the DCMS powers, while y = Al/(Al+Ti) also varies as a result of Me+ ion irradiation. Results reveal a strong dependence of film properties on the mass of the HiPIMS-generated metal ions. All layers deposited with Cr+ irradiation exhibit porous nanostructure, high ox- ygen content, and poor mechanical properties. In contrast, (Ti1-yAly)(1-x)WxN films are fully-dense even with the lowest W concentration, x = 0.09, show no evidence of hexagonal AlN precipitation, and exhibit state-of the-art mechanical properties typical of Ti0.50Al0.50N grown at 500 degrees C. The process energy consumption is lowered by 64% with no negative impact on the coating quality. TRIM simulations provide an insight into the densification mechanisms.

【 授权许可】

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