Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile

SURFACE & COATINGS TECHNOLOGY

卷:200

Article; Proceedings Paper

Feng, ZC ; Yu, JW ; Li, K ; Feng, YP ; Padmanabhan, KR ; Yang, TR

关键词: porous silicon;    PL;    Raman;    RBS;    SEM;    Raman scattering;    XPS;   

DOI  :  10.1016/j.surfcoat.2005.07.025

来源: Elsevier

【 摘 要 】

A new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10-30 mu m thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman scattering, Xray photoelectron spectroscopy and Rutherford backscattering spectroscopy. With increasing resistivity of the Si(100) wafers, the P-Si layers show a slight blue shift of their visible light emission peak energy, an up shift of the peak position and a narrowing of the band width of the dominant Raman band, and a decrease in the amount of residual elemental Si on the surface. Those Si(111) wafers, etched in HF-MeCN, showed no porous structures and no visible light emission. (c) 2005 Elsevier B.V. All rights reserved.

【 授权许可】

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