Micro-patterning of Si(100) surfaces by ethanol cluster ion beams

SURFACE & COATINGS TECHNOLOGY

卷:206

Article; Proceedings Paper

Takaoka, Gikan H.¹  Ryuto, Hiromichi¹  Ozaki, Ryosuke¹  Mukai, Hiroshi¹  Takeuchi, Mitsuaki¹ 

[1] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Nishikyo Ku, Kyoto 6158510, Japan

关键词: Ethanol cluster;    Ion beam;    Sputtering;    Surface modification;    Silicon;    Photo-resist film;   

DOI  :  10.1016/j.surfcoat.2011.04.051

来源: Elsevier

【 摘 要 】

The irradiation of Si(100) surfaces by ethanol cluster ion beams exhibited high-rate sputtering and low-damage formation. The sputtered depth increased with increase of the acceleration voltage for ethanol cluster ions, and the sputtering yield was a few hundreds times larger than that by Ar monomer ion beams. Also, the RBS channeling measurement showed that the irradiation damage was much less than that by Ar monomer ion irradiation. Furthermore, the AFM image showed that the surface roughness of the irradiated Si(100) surface was less than 1 nm. As well as the Si(100) surface, the sputtered depth of the photo-resist surface increased with increase of the acceleration voltage for ethanol cluster ions. Based on these results, micro-patterning with various sizes in a range of 3 mu m to 100 mu m was performed on the Si(100) surfaces by the ethanol cluster ion irradiation. Various kinds of photo-resist mask patterns such as circle, square and line patterns were made on a Si(100) surface by photo-resist technique. The SEM observation showed that micro-patterns were prepared on the Si (100) surface by the ethanol cluster ion irradiation. (C) 2011 Elsevier B.V. All rights reserved.

【 授权许可】

Free