Strong binding at the gold (Au) boron carbide interface

SURFACE & COATINGS TECHNOLOGY

卷:314

Article; Proceedings Paper

Echeverria, Elena¹  Dong, Bin²  Liu, Aiyun^1,3  Wilson, Ethiyal R.¹  Peterson, George⁴  Nastasi, Michael⁴  Dowben, Peter A.¹  Kelber, Jeffry A.² 

[1] Univ Nebraska, Nebraska Ctr Nanostructures & Mat, Dept Phys & Astron, 855 N 16th St, Lincoln, NE 68588 USA

[2] Univ North Texas, Dept Chem, 1155 Union Circle 305070, Denton, TX 76203 USA

[3] Shanghai Normal Univ, Dept Phys, 100 Gin Lin Rd, Shanghai 200234, Peoples R China

[4] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68583 USA

关键词: Boron carbide;    Metal contact;    Electrical properties;    Carrier lifetimes;   

DOI  :  10.1016/j.surfcoat.2016.08.081

来源: Elsevier

【 摘 要 】

We have investigated the interaction of gold (Au) with the semiconductor boron carbide through X-ray photo emission. Hydrogenated semiconducting boron carbide films, deposited by plasma enhanced chemical vapor deposition (PECVD) of closo-1,7-dicarbadodecaborane (metacarborane, m-B10C2H12), show a shift in the binding energies of the core level photoemission features when Au is deposited on the surface. The shifting of the B 1s level is smaller than for the C 1s level and the non-uniform nature of the shifts indicates a strong, complex and reversible Au chemical interaction with the surface, particularly with the C sites. Capacitance versus voltage, C(V) and current versus voltage, I(V), results for the film deposited on p-type Si(100) yield a carrier scattering time of 50 ns, significantly smaller than the 35 ps for the PECVD orthocarborane boron carbide films. (C) 2016 Elsevier B.V. All rights reserved.

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