Ultrathin SnS2 nanosheets of ultrasonic synthesis and their photoresponses from ultraviolet to near-infrared

SENSORS AND ACTUATORS B-CHEMICAL

卷:231

Article

Wu, Xing-Cai¹ 

[1] Nanjing Univ, Key Lab Mesoscop Chem MOE, Nanjing 210093, Jiangsu, Peoples R China

关键词: Tin disulfide;    Nanosheets;    Ultrasonic synthesis;    Photodetectors;   

DOI  :  10.1016/j.snb.2016.03.029

来源: Elsevier

【 摘 要 】

Ultrathin SnS2 nanosheets are synthesized for the first time by a simple ultrasonic method, and then fabricated onto a SiO2/Si substrate to form nanosheet-based phototransistor which exhibits a broad photoresponse from 254 to 980 nm, dependence of photocurrent on optical power and wavelength, fast-response, and long-term stability. Under illumination of 532-nm light with an optical power of 19.3 mW/cm(2) (0.68 nW), the photoswitch current ratio (PCR) is about 8.7, while the photoresponsivity, external quantum efficiency, and detectivity are 0.65 mA/W, 0.15%, and 1.13 x 10(8) J, respectively. Compared with the reported SnS2-based photodetectors, the SnS2-nanosheet phototransistor shows an enhanced photosensitive performance. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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