Modelling domain switching of ferroelectric BaTiO3 integrated in silicon photonic waveguides

OPTICS COMMUNICATIONS

卷:448

Article

Mishra, M.¹  Das, N. R.¹  Melloni, A.²  Morichetti, F.² 

[1] Univ Calcutta, Inst Radio Phys & Elect, 92 APC Rd, Kolkata 700009, WB, India

[2] Politecn Milan, Dipartimento Electtron Informaz & Bioingn, Via Ponzio 34, I-20133 Milan, Italy

关键词: Integrated optics;    Silicon photonics;    Optical actuators;    Ferroelectric materials;   

DOI  :  10.1016/j.optcom.2019.05.001

来源: Elsevier

【 摘 要 】

We present a model to investigate the local change of the refractive index of a ferroelectric material employed as upper cladding of silicon photonic waveguides. The model is used to predict the saturation voltage required to achieve complete domain switching in case of a BaTiO3 film and to evaluate the performance of non-volatile phase-actuators integrated in silicon waveguides. Results show that the refractive index change associated with the domain switching of the BaTiO3 cladding enables the realization of compact phase actuators with a length of few tens of micron. The proposed model has a general validity and can be used to other ferroelectric materials as well as to other semiconductor or dielectric waveguides.

【 授权许可】

Free