Gallium arsenide (GaAs) quantum photonic waveguide circuits

OPTICS COMMUNICATIONS

卷:327

Article

Wang, Jianwei^1,2  Santamato, Alberto^1,2  Jiang, Pisu^1,2  Bonneau, Damien^1,2  Engin, Erman^1,2  Silverstone, Joshua W.^1,2  Lermer, Matthias³  Beetz, Johannes³  Kamp, Martin³  Hoefling, Sven^3,4  Tanner, Michael G.⁵  Natarajan, Chandra M.⁶  Hadfield, Robert H.⁵  Dorenbos, Sander N.⁷  Zwiller, Val⁷  O'Brien, Jeremy L.^1,2  Thompson, Mark G.^1,2 

[1] Univ Bristol, Ctr Quantum Photon, HH Wills Phys Lab, Bristol BS8 1UB, Avon, England

[2] Univ Bristol, Dept Elect & Elect Engn, Bristol BS8 1UB, Avon, England

[3] Univ Wurzburg, Tech Phys & Wilhelm Conrad Rontgen Res Ctr Comple, D-97074 Wurzburg, Germany

[4] Univ St Andrews, SUPA, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

[5] Univ Glasgow, Sch Engn, Glasgow G12 8QQ, Lanark, Scotland

[6] Stanford Univ, EL Ginzton Lab, Stanford, CA 94305 USA

[7] Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

关键词: Quantum optics;    Integrated quantum photonics;    Quantum interference;    Entanglement;    GaAs waveguicle;    Pockels effect;   

DOI  :  10.1016/j.optcom.2014.02.040

来源: Elsevier

【 摘 要 】

Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on chip generation, manipulation and measurement of complex quantum stares of light The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9 +/- 1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6 +/- 1.3% and 844 +/- 1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockets effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system. (C) 014 Elsevier B.V. All rights reserved.

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