Impact of minority carrier lifetime on the performance of strained germanium light sources

OPTICS COMMUNICATIONS

卷:364

Article

Sukhdeo, David S.¹  Gupta, Shashank¹  Saraswat, Krishna C.¹  Dutt, Birendra (Raj)^2,3  Nam, Donguk⁴ 

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] APIC Corp, Culver City, CA 90230 USA

[3] PhotonIC Corp, Culver City, CA 90230 USA

[4] Inha Univ, Dept Elect Engn, Inchon 402751, South Korea

关键词: Germanium;    Optical Interconnects;    Laser;    LED;    SRH lifetime;    Strain;   

DOI  :  10.1016/j.optcom.2015.11.060

来源: Elsevier

【 摘 要 】

We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources. For Ge LEDs, we show that improving the material quality can offer even greater enhancements than techniques such as tensile strain, the leading approach for enhancing Ge light emission. For Ge lasers, we show that the defect-limited lifetime becomes increasing important as tensile strain is introduced, and that defect-limited lifetime must be improved if the full benefits of strain are to be realized. We conversely show that improving the material quality supersedes much of the utility of n-type doping for Ge lasers. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

Free