| NEUROCOMPUTING | 卷:155 |
| Emulation of spike-timing dependent plasticity in nano-scale phase change memory | |
| Article | |
| Kang, Dae-Hwan1  Jun, Hyun-Goo1  Ryoo, Kyung-Chang1  Jeong, Hongsik2  Sohn, Hyunchul3  | |
| [1] Samsung Elect Co Ltd, Semicond Business, Memory Div, Hwaseong Si 445330, Gyeonggi Do, South Korea | |
| [2] Yonsei Univ, Yonsei Inst Convergence Technol, Inchon 406840, South Korea | |
| [3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea | |
| 关键词: Spike-timing dependent plasticity; Two-phase change memory cells; Long-term potentiation; Long-term depression; Electronic synapses; | |
| DOI : 10.1016/j.neucom.2014.12.036 | |
| 来源: Elsevier | |
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【 摘 要 】
The spike-timing dependent plasticity (STDP) of biological synapses, which is known to be a function of the formulated Hebbian learning rule of human cognition, learning and memory abilities, was emulated with two-phase change memory (2-PCM) cells built with 39 nm technology. For this, we designed a novel time-modulated voltage (TMV) scheme for changing the conductance of 2-PCM cells, that could produce both long-term potentiation (LTP) and long-term depression (LTD) by applying variable (decreasing/increasing) pulse voltages according to the sign and magnitude in time interval between pre- and post-spikes. Since such schemes can be easily modified to have a variety of pulse shapes and time intervals between pulses, it is expected to be a proper scheme for designing diverse synaptic connection abilities. In addition, the small form factor and low energy consumption of 2-PCM make them comparable to biological synapses, which makes phase change memory a promising candidate for electronic synapses in large-scale neuromorphic system applications. (C) 2015 The Authors. Published by Elsevier B.V.
【 授权许可】
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【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| 10_1016_j_neucom_2014_12_036.pdf | 1908KB |
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