Interface crack initiation due to nano-scale stress concentration

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING

卷:527

Article

Sumigawa, Takashi¹  Shishido, Tetsuya¹  Murakami, Tadashi¹  Kitamura, Takayuki¹ 

[1] Kyoto Univ, Dept Mech Engn & Sci, Sakyo Ku, Kyoto 6068501, Japan

关键词: Nano-scale;    Interface;    Crack;    Initiation;    Stress concentration;    Thin film;   

DOI  :  10.1016/j.msea.2010.04.002

来源: Elsevier

【 摘 要 】

In order to investigate the mechanical factors dominating interfacial crack initiation in nano-meter-scale components, we prepared two types of specimens, which possessed different stress conditions due to the shapes, containing an interface between a 20-nm-thick copper (Cu) thin film and a silicon (Si) substrate. In one type, the stress concentration was at the interface edge, while in the other type, it was in the interior. In the former, a crack was initiated at the Cu/Si interface edge under a stress concentration of about 1 GPa extending over 20-30 nm. In the latter, using a cantilever specimen with a step, a crack was initiated in the interior at the Cu/Si interface at a stress concentration of about 1 GPa extending over 60 nm, which coincides fairly well with that at the interface edge. These results demonstrate the applicability of a unified criterion for interface crack initiation, though the interior is slightly more resistant to cracking. (C) 2010 Published by Elsevier B.V.

【 授权许可】

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