Non-thermal regimes of laser annealing of semiconductor nanostructures: crystallization without melting

Frontiers in Nanotechnology

Nanotechnology

Hanna Sopha¹  Jan M. Macak¹  Alexander V. Bulgakov²  Ondřej Novák²  Nadezhda M. Bulgakova²  Tomáš Mocek²  Martin Smrž²  Jiří Mužík²  Hana Turčičová²  Inam Mirza²  Vladimir A. Volodin³  Sergey V. Starinskiy⁴ 

[1] Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, Pardubice, Czechia;Central European Institute of Technology, Brno University of Technology, Brno, Czechia;HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Dolní Břežany, Czechia;Physics Department, Novosibirsk State University, Novosibirsk, Russia;Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia;S.S. Kutateladze Institute of Thermophysics SB RAS, Novosibirsk, Russia;Physics Department, Novosibirsk State University, Novosibirsk, Russia;

关键词: amorphous titania nanotubes;    ultrashort laser pulses;    laser-induced crystallization;    non-thermal processes;    stress waves;    multilayer nanofilms;    selective annealing;   

DOI  :  10.3389/fnano.2023.1271832

 received in 2023-08-02, accepted in 2023-10-10,  发布年份 2023

来源: Frontiers

【 摘 要 】

As-prepared nanostructured semiconductor materials are usually found in an amorphous form, which needs to be converted into a crystalline one for improving electronic properties and achieving enhanced application functionalities. The most utilized method is thermal annealing in a furnace, which however is time- and energy-consuming and not applicable for low-temperature melting substrates. An alternative is laser annealing, which can be carried out in a relatively short time and, additionally, offers the possibility of annealing localized areas. However, laser-annealed nanostructures are often distorted by melting, while preserving the as-prepared morphology is essential for practical applications. In this work, we analyze conditions of non-thermal ultrafast laser annealing of two kinds of nanostructures: anodic TiO2 nanotube layers and Ge/Si multilayer stacks. For both cases, regimes of crystallization have been found, which yield in preserving the initial nanomaterial morphologies without any melting signs. On these examples, ultrafast non-thermal mechanisms of structural material transformation are discussed, which can provide new opportunities for conversion of amorphous semiconductor nanomaterials into a desired crystalline form that is of high demand for existing and emerging technologies.

【 授权许可】

Unknown   
Copyright © 2023 Mirza, Bulgakov, Sopha, Starinskiy, Turčičová, Novák, Mužík, Smrž, Volodin, Mocek, Macak and Bulgakova.