Flexible multilevel nonvolatile biocompatible memristor with high durability

Journal of Nanobiotechnology

Research

Da-Long Ni¹  Xu Zhao²  Xiaozhong Huang²  Xiaoping Chen²  Jianling Yue²  Xiu-Zhi Tang³  Ziqi Sun⁴  Hailong Hu⁵ 

[1] Department of Orthopaedics, Shanghai Key Laboratory for Prevention and Treatment of Bone and Joint Diseases, Shanghai Institute of Traumatology and Orthopaedics, Ruijin Hospital, Shanghai Jiao Tong University School of Medicine, 200025, Shanghai, China;Powder Metallurgy Research Institute, Central South University, 410083, Changsha, China;Research Institute of Aerospace Technology, Central South University, 410083, Changsha, China;School of Chemistry and Physics, QUT Centre for Materials Science, Queensland University of Technology, 4001, Brisbane, QLD, Australia;State Key Laboratory of Powder Metallurgy, Hunan Key Laboratory of Advanced fibers and Composites, State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Research Institute of Aerospace Technology, Central South University, 410083, Changsha, China;

关键词: Implantable memristors;    AlOOH nanosheets;    Information storage;    Multilevel;   

DOI  :  10.1186/s12951-023-02117-5

 received in 2023-06-20, accepted in 2023-09-20,  发布年份 2023

来源: Springer

【 摘 要 】

Current protein or glucose based biomemristors have low resistance-switching performance and require complex structural designs, significantly hindering the development of implantable memristor devices. It is imperative to discover novel candidate materials for biomemristor with high durability and excellent biosafety for implantable health monitoring. Herein, we initially demonstrate the resistance switching characteristics of a nonvolatile memristor in a configuration of Pt/AlOOH/ITO consisting of biocompatible AlOOH nanosheets sandwiched between a Indium Tin Oxides (ITO) electrode and a platinum (Pt) counter-electrode. The hydrothermally synthesized AlOOH nanosheets have excellent biocompatibility as confirmed through the Cell Counting Kit-8 (CCK-8) tests. Four discrete resistance levels are achieved in this assembled device in responsible to different compliance currents (ICC) for the set process, where the emerging multilevel states show high durability over 103 cycles, outperforming the protein-based biomemristors under similar conditions. The excellent performance of the Pt/AlOOH/ITO memristor is attributed to the significant role of hydrogen proton with pipe effect, as confirmed by both experimental results and density functional theory (DFT) analyses. The present results indicate the nonvolatile memristors with great potential as the next generation implantable multilevel resistive memories for long-term human health monitoring.Graphical Abstract

【 授权许可】

CC BY   
© BioMed Central Ltd., part of Springer Nature 2023

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