Dipole doping effect in MoS2 field effect transistors based on phase transition of ferroelectric polymer dopant

Frontiers in Materials

Materials

Taehyun Park¹  Dong Hyun Lee²  Hocheon Yoo²  Youngkyun Jung³  Junghee Park³  Nackyong Joo³  Uiyeon Won³  Taeho Jeong³ 

[1] Department of Chemical and Biological Engineering, Gachon University, Seongnam, Gyeonggi, Republic of Korea;Department of Electronic Engineering, Gachon University, Seongnam, Gyeonggi, Republic of Korea;Electronic Devices Research Team, Hyundai Motor Group, Uiwang, Gyeonggi, Republic of Korea;

关键词: transition-metal dichalcogenides;    molybdenum disulfide;    polar polymer;    dipole moment effects;    field effect transistors;   

DOI  :  10.3389/fmats.2023.1139954

 received in 2023-01-08, accepted in 2023-03-20,  发布年份 2023

来源: Frontiers

【 摘 要 】

Molybdenum disulfide (MoS2) has great potential for next-generation electronic devices. On the other hand, stable doping methods are required to adjust its physical properties so MoS2 can be utilized in practical applications, such as transistors and photodetectors. On the other hand, a conventional doping method based on ion implantation is incompatible with 2D MoS2 because of the damage to the lattice structures of MoS2. This paper presents an n-type doping method for MoS2 field-effect transistors (FETs) using a poly (vinylidene fluoride-co-trifluoroethylene) (P (VDF-TrFE)) and polar polymer. The dipole moment of P (VDF-TrFE) provides n-type doping on MoS2 FETs. The polar phase formation in dopant films enhances the doping effects, and the relationship between phase transition and n-type doping states was investigated using optical and electrical characterization methods. Under the optimal doping conditions, the doped MoS2 FET achieved an improved field effect mobility of 34.4 cm2 V−1s–1, a negative shift in the threshold voltage by −25.6 V, and a high on-current of 21 μA compared to the pristine MoS2 FET.

【 授权许可】

Unknown   
Copyright © 2023 Lee, Park, Jeong, Jung, Park, Joo, Won and Yoo.