Photo-thermoelastic wave propagation with changing thermal conductivity on excited pulsed laser nanoscale microelongated semiconductor material

Frontiers in Physics

Physics

Alaa A. El-Bary¹  Shreen El-Sapa²  Khaled Lotfy³  Riadh Chteoui⁴  Ashraf M. Farhan⁵ 

[1] Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt;Council of Future Studies and Risk Management, Academy of Scientific Research and Technology, Cairo, Egypt;Department of Mathematical Sciences, College of Science, Princess Nourah bint Abdulrahman University,, Riyadh, Saudi Arabia;Department of Mathematics, Faculty of Science, Zagazig University, Zagazig, Egypt;Department of Mathematics, Faculty of Science, Taibah University, Medina, Saudi Arabia;Laboratory of Algebra, Number Theory and Nonlinear Analysis, Department of Mathematics, Faculty of Sciences, University of Monastir, Monastir, Tunisia;Department of Mathematics, Faculty of Sciences, University of Tabuk, Tabuk, Saudi Arabia;Physics Department, University College of Samtah, Jazan University, Riyadh, Saudi Arabia;

关键词: photoexcitation;    microelongation;    optical waves;    thermal conductivity;    semiconductor;    harmonic wave;   

DOI  :  10.3389/fphy.2023.1166622

 received in 2023-02-15, accepted in 2023-04-17,  发布年份 2023

来源: Frontiers

【 摘 要 】

Indroduction: The novel model of a non-local elastic semiconductor material that is microelongated is created. The process of photothermal transfer is responsible for the stimulation of the material. Photo-thermoelastic theories are used when the thermal conductivity is changed for the non-local medium. Under the influence of laser pulses, the effective framework describes the nanoscale microelongation instance as well as the interference between the photo-thermoelastic propagation waves in the non-local medium. It is possible to think of thermal conductivity as a linear function of temperature when electronic and thermoelastic deformation mechanisms are described. Two-dimensional deformation (2D) is used to extract the main fields, which obtained in non-dimension.Methods: Harmonic wave analysis, which is described by the normal mode, has been used to convert the basic equations into non-homogeneous higher-order ordinary differential equations. Applying a small subset of the possible non-local semiconductor surface conditions leads to exhaustive solutions.Result and Discussion: The outcomes of numerical simulations for silicon (Si) are graphically shown. There are comparisons made and explanations given for the investigated physical factors like their thermal conductivity, laser pulses and microelongation parameters.

【 授权许可】

Unknown   
Copyright © 2023 Farhan, El-Sapa, El-Bary, Chteoui and Lotfy.