Gate-Bias Induced R-ON Instability in p-GaN Power HEMTs

卷:44

Article

关键词: THRESHOLD VOLTAGE INSTABILITY;    SHIFT;   

DOI  :  10.1109/LED.2023.3265503

来源: SCIE

【 摘 要 】

In this letter, we investigate the on-resistance (R-ON) instability in p-GaN power HEMTs induced by a positive or negative gate bias (V-GB), following the application of a quasi-static initialization voltage (V-GP) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90-135 C-? range. By monitoring the resulting drain current transients, the activation energy as well as time constants of the processes are characterized. Not trivially, both R-ON increase/decrease were found to be thermally activated and with same activation energy. We attribute the thermal activation of both R-ON increase/decrease to the charging/discharging of hole traps present in the AlGaN barrier in the region below the gate.

【 授权许可】

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