NPN SiGe Hetero Junction Transistor Latch-Up Memory Selector

卷:44

Article

关键词: IMPACT-IONIZATION;    BIPOLAR-TRANSISTORS;    BREAKDOWN;    MRAM;   

DOI  :  10.1109/LED.2023.3242302

来源: SCIE

【 摘 要 】

NPN latch-up memory selector devices featuring SiGe hetero-junctions are fabricated and measured electrically. 25% Ge is introduced into the floating base layer by epitaxy. The performance of this device is compared against an implanted Si stack. It is observed that the addition of 25% Ge in the floating base layer of these latch-up selector devices boosts the non-linearity by more than $\times {100}$ and enables abrupt latch-up below 2V. TCAD simulations comparing drift-diffusion and hydro-dynamic models are used to validate our understanding of the device.

【 授权许可】

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