On-Orbit Performance of Pd/4H-SiC Schottky UV Detectors in a Low-Earth Orbit

Indian Journal of Pure & Applied Physics

article

Bhavana D¹  Sirisha J¹  Sumesh M A¹  Ravi Chandra Babu G²  Amit Maji¹  S P Karanth¹  Sriram K V¹ 

[1] Laboratory for Electro-Optics Systems, Indian Space Research Organization;U R Rao Satellite Centre, Indian Space Research Organization

关键词: 4H-SiC UV detectors;    LEO;    Space qualification;    Solar UV measurements;    Article;   

DOI  :  10.56042/ijpap.v61i2.69770

来源: National Institute of Science Communication and Information Resources

【 摘 要 】

The monitoring of solar ultraviolet radiation from a space platform is now considered essential for a wide range of fields including solar physics, atmospheric science and astrobiology. 4H-Silicon Carbide (4H-SiC) is a superior alternative to conventional materials like silicon for the fabrication of UV detectors for adverse space conditions due to its inherent radiation hardness and visible-blind nature. This paper describes the space qualification and deployment of indigenously developed Pd/4H-SiC Schottky UV detectors in a low-earth orbit (LEO) and their on-board performance. Two SiC UV detectors were flown as a rad-hard sun detection sensor in the nanosatellite INS-2TD. The sensor has carried out solar UV flux observations continuously since its launch in February 2022 and the data gathered during the first seven months of flight is discussed in this paper.

【 授权许可】

Unknown