Effects of Focused Ion Beam Lithography on La 2− x Sr x CuO 4 Single Crystals

Condensed Matter

article

Roberta Caruso¹  Fernando Camino¹  Genda Gu¹  John M. Tranquada¹  Myung-Geun Han¹  Yimei Zhu¹  Anthony T. Bollinger¹  Ivan Božović¹ 

[1]Brookhaven National Laboratory

[2]Department of Chemistry, Yale University

关键词: superconductivity;    lithography;    focused ion beam;   

DOI  :  10.3390/condmat8020035

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

Focused ion beam (FIB) milling is a mask-free lithography technique that allows the precise shaping of 3D materials on the micron and sub-micron scale. The recent discovery of electronic nematicity in La2−xSrxCuO4 (LSCO) thin films triggered the search for the same phenomenon in bulk LSCO crystals. With this motivation, we have systematically explored FIB patterning of bulk LSCO crystals into micro-devices suitable for longitudinal and transverse resistivity measurements. We found that several detrimental factors can affect the result, ultimately compromising the possibility of effectively using FIB milling to fabricate sub-micrometer LSCO devices, especially in the underdoped regime.

【 授权许可】

CC BY