Effect of pre-annealing of Mo foil substrate on CZTSSe thin films and Mo(S,Se) 2 interface layer

Chalcogenide Letters

article

X. S. Wu¹  J. X. Xu² 

[1] School of Materials and Energy, Guangdong University of Technology;School of Integrated Circuits, Guangdong University of Technology

关键词: CZTSSe;    Pre-annealing;    MoOx;    Mo(S;    Se)2;    Interface layer;   

DOI  :  10.15251/CL.2022.199.599

学科分类：物理（综合）

来源: Forum of Chalcogeniders

【 摘 要 】

Cu2ZnSn(S,Se)4 (CZTSSe) thin film deposited on flexible Mo foil substrate has advantage of high mass specific power and good ductility. However, a thick Mo(S,Se)2 interface layer is easily to be formed between CZTSSe and Mo foil substrate. The ohmic contact property of CZTSSe/Mo is deteriorated by the formation of Mo(S,Se)2. In this work, the Mo foil substrate was pre-annealed to inhibit the growth of Mo(S,Se)2 interface layer. CZTSSe thin films were prepared on the pre-annealed Mo foil substrate by sol-gel and selenization methods. The pre-annealing treatment of Mo foil substrate leads to the oxidation of Mo. During the high temperature selenization process, the MoOx acts as a buffer layer to suppress the formation of the Mo(S,Se)2 interface layer. With the increase of the pre-annealing temperature of the Mo foil substrate, the thickness of the Mo(S,Se)2 interface layer decreases, and the resistance of CZTSSe/Mo(S,Se)2/Mo structure decreases. The ohmic contact properties of CZTSSe/Mo can be improved by the pre-annealing treatment of metal Mo foil substrates.

【 授权许可】

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