IEICE Electronics Express | |
A compact weak PUF circuit based on MOSFET subthreshold leakage current | |
article | |
Yuanfeng Xie1  Gang Li1  Pengjun Wang1  Ziyu Zhou1  | |
[1] College of Electrical and Electronic Engineering, Wenzhou University | |
关键词: physically unclonable function; sub-threshold leakage current; compactness; circuit design; | |
DOI : 10.1587/elex.19.20220415 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
Owing to the large area and power consumption of traditional physically unclonable function (PUF) circuits, they are susceptible to interference from environmental factors. A compact PUF circuit design scheme is proposed by analyzing the circuit structure and sub-threshold leakage current deviation characteristics of a bistable PUF. First, the current-voltage sensitive characteristics of a transistor in the sub-threshold operating region are utilized. Next, to improve the output response speed and the uniqueness of the characteristic information of the PUF circuit, the proposed PUF circuit is designed which combines with the positive feedback and RS latch characteristics. Finally, simulation results based on the TSMC 65nm CMOS process show that the PUF has good uniqueness, randomness, and reliability. The cell layout area, the bit error rate (BER) in the worst case, and the energy consumption are 0.177µm2, 2.8%, and 8.976fJ/bit respectively.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO202306290004528ZK.pdf | 3062KB | download |