IEICE Electronics Express | |
A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels | |
article | |
Yuying Wang1  Aohang Zhang1  Peng Jian1  Wensuo Chen1  | |
[1] State Key Lab of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University | |
关键词: fast-switching; snapback-free; silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT); three electron extracting channels; planar gate; | |
DOI : 10.1587/elex.19.20220288 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
In this paper, a snapback-free and fast-switching SOI LIGBT with three electron extracting channels (TEC) is proposed and investigated. Compared with SBM LIGBT, the trench gate of n-MOS is changed to a planar gate, and a P- region is added to prevent N+ short circuit while providing electron extracting channel. Simulation results show that TEC decreases EOFF by 15% at VON=1.8V relative to SBM when all three channels are open, while TEC still decreases EOFF by 10% at VON =1.55V relative to SBM when only two channels are available. The device achieves the same breakdown voltage level of 603V as SBM without additional trench etch process required.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO202306290004494ZK.pdf | 3918KB | download |