A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels

IEICE Electronics Express

article

Yuying Wang¹  Aohang Zhang¹  Peng Jian¹  Wensuo Chen¹ 

[1] State Key Lab of Power Transmission Equipment & System Security and New Technology, School of Electrical Engineering, Chongqing University

关键词: fast-switching;    snapback-free;    silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT);    three electron extracting channels;    planar gate;   

DOI  :  10.1587/elex.19.20220288

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In this paper, a snapback-free and fast-switching SOI LIGBT with three electron extracting channels (TEC) is proposed and investigated. Compared with SBM LIGBT, the trench gate of n-MOS is changed to a planar gate, and a P- region is added to prevent N+ short circuit while providing electron extracting channel. Simulation results show that TEC decreases EOFF by 15% at VON=1.8V relative to SBM when all three channels are open, while TEC still decreases EOFF by 10% at VON =1.55V relative to SBM when only two channels are available. The device achieves the same breakdown voltage level of 603V as SBM without additional trench etch process required.

【 授权许可】

CC BY