| IEICE Electronics Express | |
| CASSANN-v2: A high-performance CNN accelerator architecture with on-chip memory self-adaptive tuning | |
| article | |
| Feng Liu1  Ruixiu Qiao1  Gang Chen1  Guoliang Gong1  Huaxiang Lu1  | |
| [1] Institute of Semiconductors, Chinese Academy of Sciences;University of Chinese Academy of Sciences;Semiconductor Neural Network Intelligent Perception and Computing Technology Beijing Key Laboratory;Materials and Optoelectronics Research Center, University of Chinese Academy of Sciences;College of Microelectronics, University of Chinese Academy of Sciences | |
| 关键词: SoC design; convolutional neural network (CNN) accelerator; high-performance accelerator; architecture optimization; | |
| DOI : 10.1587/elex.19.20220124 | |
| 学科分类:电子、光学、磁材料 | |
| 来源: Denshi Jouhou Tsuushin Gakkai | |
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【 摘 要 】
This work proposes a high-performance reconfigurable CNN accelerator architecture, called CASSANN-v2, which can achieve 1TOPS peak performance at 1GHz. CASSANN-v2 provides the function of on-chip SRAM memory real-time adaptive tuning by parameter configuration to reduce the intermediate output data transmission to further exploit the acceleration performance. The system simulation results show that CASSANN-v2 exhibits excellent performance on VGG-16 and ResNet-18 inference, with a throughput of 1009.54GOPS and 923.24GOPS at 1GHz, which achieved 98.59% and 90.20% average processing element utilization, respectively. Compared with state-of-the-art accelerator works, CASSANN-v2 improves the resource utilization by 2.02× in VGG-16 and 2.35× in ResNet-18.
【 授权许可】
CC BY
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO202306290004449ZK.pdf | 1764KB |
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