Design of GaN reconfigurable power amplifier based on band-pass filter matching networks

IEICE Electronics Express

article

Zhen Zhang¹  Mifang Cong¹  Limei Song¹  Jianwei Ren¹  Ke Li¹ 

[1] Institute of Microelectronics of Chinese Academy of Sciences;University of Chinese Academy of Sciences;Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences

关键词: RF power amplifier;    PIN switch;    reconfigurable;    GaN device;   

DOI  :  10.1587/elex.19.20220080

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A broadband GaN reconfigurable power amplifier based on band-pass filter matching networks is presented in this work. To realize the reconfigurable power amplifier, closed-form solution theory and distributed PIN switch are used in matching network design. PIN switch controls the branch circuit of the matching network. This reconfigurable PA is designed for 1.2-2.0GHz and 2.2-3.0GHz, which has 10W (40dBm) output power at least and 37.4% drain efficiency (DE) with the power gain higher than 10dB. Measurement results show the designed reconfigurable PA meets the parameters mentioned above, and the correctness of the proposed reconfigurable PA theory is verified.

【 授权许可】

CC BY