Research on Ni 3 Sn 4 intermetallic compound for 5μm diameter Cu/Ni/Sn-3.0Ag micro bumps

IEICE Electronics Express

article

Fengwei Dai¹  David Wei Zhang¹  Yangyang Yan³  Guojun Wang³  Liqiang Cao² 

[1] School of Microelectronics, Fudan University;Institute of Microelectronics of Chinese Academy of Sciences;The National Center for Advanced Packaging

关键词: Cu/Ni/Sn-30wt%Ag micro bump;    Ni3Sn4 IMC;    grain boundary diffusion;    slender columnar IMCs;   

DOI  :  10.1587/elex.18.20210453

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

for 5μm diameter micro bumps, the interfacial intermetallic compounds (IMCs) seriously affects the interconnection performance of micro bumps. In this paper, we focused on the discussion of the growth and control mechanism of IMCs of 5um diameter micro bumps at different temperatures and durations. The growth mechanism and morphology of Ni3Sn4 IMC was studied. Through the EDS analysis of the cross-sectional micro bumps, it could be determined that the composition of the slender columnar crystal IMC was Ni3Sn4. When the heating temperature was higher than the melting point of Sn-3.0wt%Ag solder, the IMC would exhibit uneven and abnormal growth along the Sn grain boundary. Furthermore, the IMC growth and diffusion mechanisms of solid-solid and solid-liquid interface reaction were discussed respectively. Finally, based on the temperature and duration of the growth and evolution of the Ni3Sn4 IMC, we gave appropriate suggestions for the use of small-sized micro bumps.

【 授权许可】

CC BY