Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories

IEICE Electronics Express

article

Sangmin Ahn¹  Hyungcheol Shin¹ 

[1] Inter-University Semiconductor Research Center ,(ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

关键词: 3D NAND Flash;    new read scheme;    read disturb;    hot carrier injection;    partial boosting channel;    optimization;   

DOI  :  10.1587/elex.18.20210299

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In 3D NAND Flash, new read operation scheme is proposed to optimize read disturb in unselected strings. During read operation, the two types of read disturb occur, which are soft programming and HCI-induced read disturb. These are caused by repetitive Fowler-Nordheim (F-N) stress and boosting channel potential difference, respectively. In this letter, we show optimization of two read disturb phenomena through technology computer-aided design (TCAD) simulation with partial-boosting channel potential. Furthermore, the various conditions that affect channel potential in read operation are investigated. These results will be basis of the practical 3D NAND read operation analysis.

【 授权许可】

CC BY