Dynamic defect as nonradiative recombination center in semiconductors

Article

关键词: DX CENTERS;    PERSISTENT PHOTOCONDUCTIVITY;    ELECTRONIC-STRUCTURE;    GAAS;    DONOR;    TRANSITIONS;    EFFICIENCY;    SURFACES;    MODEL;   

DOI  :  10.1103/PhysRevB.100.245208

来源: SCIE

【 摘 要 】

We present a theory of nonradiative recombination (NRR) with an emphasis on the so far little-explored dynamic effect in the process. We show that it can significantly enhance the NRR rate over that of a static midgap level as suggested by the Shockley-Read-Hall theory, whereby offering an alternative explanation to the long-lasting discrepancy between theory and experiment for semiconductors. As an illustration, we show that dynamic NRR can take place at the DX center in Si-doped GaAs which, combined with a modified ABC model at high carrier-density limit, makes it possible to verify the theory directly by experiment.

【 授权许可】

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