Electronic structure studies of FeSi: A chiral topological system

Article

关键词: LOW-TEMPERATURE TRANSPORT;    OPTICAL-PROPERTIES;    GAP FORMATION;    SEMIMETAL;    SEMICONDUCTOR;    SIGNATURES;    FERMIONS;    POINT;    BAND;   

DOI  :  10.1103/PhysRevB.101.235105

来源: SCIE

【 摘 要 】

Most recent observations of topological Fermi arcs on the surface of manyfold degenerate B20 systems, CoSi and RhSi, have attracted enormous research interests. Although another isostructural system, FeSi, has been predicted to show bulk chiral fermions, it is yet to be clear theoretically and as well experimentally that whether FeSi possesses the topological surface Fermi arcs associated with the exotic chiral fermions in vicinity of the Fermi level. In this contribution, using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), we present the low-energy electronic structure of FeSi. We further report the surface state calculations to provide insights into the surface band structure of FeSi near the Fermi level. Unlike in CoSi or RhSi, FeSi has no topological Fermi arcs near the Fermi level as confirmed both from ARPES and surface state calculations. Further, the ARPES data show spin-orbit coupling (SOC) band splitting of 40 meV, which is in good agreement with bulk band-structure calculations. We noticed an anomalous temperature-dependent resistivity in FeSi which can be understood through the electron-phonon interactions as we find a Debye energy of 80 meV from the ARPES data.

【 授权许可】

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