Switching of the electron-phonon interaction in 1T-VSe2 assisted by hot carriers | |
Article | |
关键词: CHARGE-DENSITY-WAVE; FERMI-SURFACE; TRANSITION; | |
DOI : 10.1103/PhysRevB.103.L241108 | |
来源: SCIE |
【 摘 要 】
We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1T-VSe 2. Ultrafast snapshots of the light-induced hot carrier dynamics and nonequilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of (200 +/- 40) fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasiequilibrium state that is experimentally observed.
【 授权许可】
Free