ENHANCEMENT OF THE 3RD-ORDER NONLINEAR-OPTICAL SUSCEPTIBILITY IN SI QUANTUM WIRES

Article

关键词: SMALL SEMICONDUCTOR CRYSTALLITES;    POROUS SILICON;    DOPED GLASSES;    MICROCRYSTALLITES;    LUMINESCENCE;    ELECTRON;    WELL;   

DOI  :  10.1103/PhysRevB.48.11879

来源: SCIE

【 摘 要 】

Recent observation of efficient light emission from porous silicon has attracted much attention and renewed interests in the study of nonlinear optical properties of nanometer-sized quantum systems. In this paper, we study the third-order nonlinear optical susceptibility of semiconductor quantum wires. The quantum wires are taken to be circular columns with a cross section size of approximately 1 nm. The excitonic effects are taken to be the major electronic excitations. We find that the quantum confinement of the excitons greatly enhances the third-order optical nonlinear susceptibility in a quantum wire. The source of the enhancement is primarily the confinement-induced localization of excitons. The large enhancement of the third-order optical nonlinearity estimated here is consistent with the recent observation of the efficient infrared-up-conversion luminescence in porous silicon.

【 授权许可】

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