ENHANCEMENT OF THE 3RD-ORDER NONLINEAR-OPTICAL SUSCEPTIBILITY IN SI QUANTUM WIRES | |
Article | |
关键词: SMALL SEMICONDUCTOR CRYSTALLITES; POROUS SILICON; DOPED GLASSES; MICROCRYSTALLITES; LUMINESCENCE; ELECTRON; WELL; | |
DOI : 10.1103/PhysRevB.48.11879 | |
来源: SCIE |
【 摘 要 】
Recent observation of efficient light emission from porous silicon has attracted much attention and renewed interests in the study of nonlinear optical properties of nanometer-sized quantum systems. In this paper, we study the third-order nonlinear optical susceptibility of semiconductor quantum wires. The quantum wires are taken to be circular columns with a cross section size of approximately 1 nm. The excitonic effects are taken to be the major electronic excitations. We find that the quantum confinement of the excitons greatly enhances the third-order optical nonlinear susceptibility in a quantum wire. The source of the enhancement is primarily the confinement-induced localization of excitons. The large enhancement of the third-order optical nonlinearity estimated here is consistent with the recent observation of the efficient infrared-up-conversion luminescence in porous silicon.
【 授权许可】
Free