Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

Article

关键词: 2 DIMENSIONS;    GAAS/ALXGA1-XAS HETEROSTRUCTURE;    ELECTRON-GAS;    COULOMB GAP;    TRANSITION;    LOCALIZATION;    BEHAVIOR;    MOBILITY;    CRYSTAL;   

DOI  :  10.1103/PhysRevB.68.241308

来源: SCIE

【 摘 要 】

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e(2)/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

【 授权许可】

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