Nonlinear bias dependence of spin-transfer torque from atomic first principles

Article

关键词: TUNNEL MAGNETORESISTANCE;    VOLTAGE-DEPENDENCE;    ROOM-TEMPERATURE;    MGO;    EMISSION;   

DOI  :  10.1103/PhysRevB.84.014401

来源: SCIE

【 摘 要 】

We report first-principles analysis on the bias dependence of spin-transfer torque (STT) in Fe/MgO/Fe magnetic tunnel junctions. The in-plane STT changes from linear to nonlinear dependence as the bias voltage is increased from zero. The angle dependence of STT is symmetric at low bias but asymmetric at high bias. The nonlinear behavior is marked by a threshold point in the STT versus bias curve. The high-bias nonlinear STT is found to be controlled by a resonant transmission channel in the antiparallel configuration of the magnetic moments. Disorder scattering due to oxygen vacancies in MgO significantly changes the STT threshold bias.

【 授权许可】

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