Chemical tuning of electrical transport in Ti1-xPtxSe2-y

Article

关键词: TISE2;    SUPERCONDUCTIVITY;    MONOLAYER;    CRYSTAL;    METALS;    FILMS;    MOS2;   

DOI  :  10.1103/PhysRevB.91.045125

来源: SCIE

【 摘 要 】

The structural and transport properties of polycrystalline Ti1-xPtxSe2-y (x <= 0.13, y <= 0.2) are studied, revealing highly tunable electrical properties, spanning nearly ten orders of magnitude in scaled resistivity. Using x-ray and neutron diffraction, Pt is found to dope on the Ti site. In the absence of Pt doping (for x = 0), Se deficiency (y > 0) increases the metallic character of TiSe2, while a large increase of the low-temperature resistivity is favored by a lack of Se deficiency (y = 0) and increasing amounts of doped Pt (x > 0). The chemical tuning of the resistivity in Ti1-xPtxSe2-y with Se deficiency and Pt doping results in a metal-to-insulator transition. Simultaneous Pt doping and Se deficiency (x, y > 0) confirms the competition between the two opposing trends in electrical transport, with the main outcome being the suppression of the charge density wave transition below 2 K for y = 2x = 0.18. Band structure calculations on a subset of Ti1-xPtxSe2-y compositions are in line with the experimental observations.

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